This paper outlines the necessary attributes for successful semiconductor manufacturing of PFAS used in plasma etch and deposition, including but not limited to reaction rates and selectivity and surface reaction characteristics. Additionally, this paper discusses non-PFAS alternative compounds where available, as well as efforts to develop alternatives. Finally, we’ll explore the potential release/exposure pathways of these materials from semiconductor fabrication (fab) facilities and mitigation options. 

Please fill out the form below to download your copy:

PFAS-Containing Fluorochemicals Used in Semiconductor Manufacturing Plasma-Enabled Etch and Deposition